EPJ Photovolt.
Volume 14, 2023
Special Issue on ‘Recent Advances in Photovoltaics 2022’, edited by Mohamed Amara, Thomas Fix, Jean-Paul Kleider, Judikaël Le Rouzo and Denis Mencaraglia
Article Number 31
Number of page(s) 8
Section Semiconductor Thin Films
Published online 06 November 2023
  1. S. Almosni et al., Correlations between electrical and optical properties in lattice-matched GaAsPN/GaP solar cells, Sol. Energy Mater. Sol. Cells 147, 53 (2016) [CrossRef] [Google Scholar]
  2. K. Yamane, K. Sato, H. Sekiguchi, H. Okada, A. Wakahara, Doping control of GaAsPN alloys by molecular beam epitaxy for monolithic III-V/Si tandem solar cells, J. Cryst. Growth 473, 55 (2017) [CrossRef] [Google Scholar]
  3. S.P. Bremner, M.Y. Levy, C.B. Honsberg, Analysis of tandem solar cell efficiencies under AM1.5G spectrum using a rapid flux calculation method, Prog. Photovoltaics Res. Appl. 16, 225 (2008) [CrossRef] [Google Scholar]
  4. NREL, Best research-cell efficiency chart, [Google Scholar]
  5. M. Da Silva et al., GaAsPN-based PIN solar cells MBE-grown on GaP substrates: toward the III-V/Si tandem solar cell, in Physics, Simulation, and Photonic Engineering of Photovoltaic Devices IV, 9358, 93580H (2015) [Google Scholar]
  6. N. Jain, M.K. Hudait, III–V multijunction solar cell integration with silicon: present status, challenges and future outlook, Energy Harvest. Syst. 1, 121 (2014) [Google Scholar]
  7. S. Almosni et al., Evaluation of InGaPN and GaAsPN materials lattice-matched to Si for multi-junction solar cells, J. Appl. Phys. 113, 12 (2013) [Google Scholar]
  8. Y. Ping Wang et al., Abrupt GaP/Si hetero-interface using bistepped Si buffer, Appl. Phys. Lett. 107, 191603 (2015) [CrossRef] [Google Scholar]
  9. T. Soga, T. Jimbo, M. Umeno, Dislocation generation mechanisms for GaP on Si grown by metalorganic chemical vapor deposition, Appl. Phys. Lett. 63, 2543 (1993) [CrossRef] [Google Scholar]
  10. Y. Ping Wang et al., Quantitative evaluation of micro twins and antiphase defects in GaP/Si nanolayers for a III–V photonics platform on silicon using a laboratory X-ray diffraction setup, J. Appl. Crystallogr. 48, 702 (2015) [CrossRef] [Google Scholar]
  11. A. Katz, B.E. Weir, W.C. Dautremont‐Smith, Au/Pt/Ti contacts to p ‐In 0.53 Ga 0.47 As and n ‐InP layers formed by a single metallization common step and rapid thermal processing, J. Appl. Phys. 68, 1123 (1990) [CrossRef] [Google Scholar]
  12. C. McDonald et al., Zero-dimensional methylammonium iodo bismuthate solar cells and synergistic interactions with silicon nanocrystals, Nanoscale 9, 18759 (2017) [CrossRef] [PubMed] [Google Scholar]
  13. B.G. Mendis et al., Nanometre-scale optical property fluctuations in Cu2ZnSnS4 revealed by low temperature cathodoluminescence, Sol. Energy Mater. Sol. Cells 174, 65 (2018) [CrossRef] [Google Scholar]
  14. I. Vurgaftman, J.R. Meyer, L.R. Ram-Mohan, Band parameters for III–V compound semiconductors and their alloys, J. Appl. Phys. 89, 5815 (2001) [CrossRef] [Google Scholar]
  15. D.E. Aspnes, A.A. Studna, Dielectric functions and optical parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 eV, Phys. Rev. B 27, 985 (1983) [Google Scholar]
  16. C.G. Van de Walle, J. Neugebauer, Universal alignment of hydrogen levels in semiconductors, insulators and solutions, Nature 423, 626 (2003) [CrossRef] [PubMed] [Google Scholar]
  17. W. Shockley, H.J. Queisser, Detailed Balance Limit of Efficiency of p-n Junction Solar Cells, J. Appl. Phys. 32, 510 (1961) [CrossRef] [Google Scholar]
  18. S. Rühle, Tabulated values of the Shockley–Queisser limit for single junction solar cells, Sol. Energy 130, 139 (2016) [CrossRef] [Google Scholar]

Current usage metrics show cumulative count of Article Views (full-text article views including HTML views, PDF and ePub downloads, according to the available data) and Abstracts Views on Vision4Press platform.

Data correspond to usage on the plateform after 2015. The current usage metrics is available 48-96 hours after online publication and is updated daily on week days.

Initial download of the metrics may take a while.