Investigation of temperature homogeneity during infrared soldering of silicon solar cells using the finite element method

Special Issue on ‘EU PVSEC 2024: State of the Art and Developments in Photovoltaics’, edited by Robert Kenny and Gabriele Eder

Open Access

Table 2

Material properties of the involved components used for the simulation.

Material	Thermal conductivity, k [W/m*K]	Specific heat capacity, C_p [J/kg*K]	Emissivity, ε [−]	Reflectivity, ρ [−]	Transmissivity, τ [−]
Silicon solar cell	130^*	700^*	0.70 − 0.75^*	0.13^*	0.12^*
Sn60Pb40 solder	50^*	150^*	0.30 [18]	1 − ε	–
Copper wire	400^⁑	385^⁑	0.15 [18]	1 − ε	–
Down-holder	238^*	900^*	0.30^*	1 − ε	–
Tungsten filament	k(T) [19]	C_p(T) [19]	ε(T) [20]	1 − ε	–
Aluminum reflector	238^⁑	900^⁑	1 − ρ	0.92^⁑	–
Quartz glass	1.4^⁑	730^⁑	0.08^*	0.04^*	0.88^⁑

Measured.

^⁑

Provided by manufacturer.

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