Open Access

Table 1

Atlas simulation parameters for the different layers.

  Parameter Value
c-Si(n) absorber Thickness 180 µm
  Resistivity 5 Ω.cm
  µe and µh Klaassen model [29]
  SRH lifetime 3 ms
  Fermi level 4.74 eV
  Intrinsic concentration 8.6 × 109 cm−3
  Auger lifetime Richter model [30]
n-contact Doping level 3 × 1020 cm−3
  µh and µe at interlayer 10−3 cm2V−1s−1
  Interlayer thickness 1.5 nm
p-contact µh and µe at interlayer 10−2– 10−7 cm2V−1s−1
  Work function 4.91 − 5.33 eV
  Interlayer thickness 1.5 nm
  Seff 10 − 105 cm/s

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