Open Access
Table 1
Atlas simulation parameters for the different layers.
Parameter | Value | |
---|---|---|
c-Si(n) absorber | Thickness | 180 µm |
Resistivity | 5 Ω.cm | |
µe and µh | Klaassen model [29] | |
SRH lifetime | 3 ms | |
Fermi level | 4.74 eV | |
Intrinsic concentration | 8.6 × 109 cm−3 | |
Auger lifetime | Richter model [30] | |
n-contact | Doping level | 3 × 1020 cm−3 |
µh and µe at interlayer | 10−3 cm2V−1s−1 | |
Interlayer thickness | 1.5 nm | |
p-contact | µh and µe at interlayer | 10−2– 10−7 cm2V−1s−1 |
Work function | 4.91 − 5.33 eV | |
Interlayer thickness | 1.5 nm | |
Seff | 10 − 105 cm/s |
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