Issue |
EPJ Photovolt.
Volume 15, 2024
|
|
---|---|---|
Article Number | 34 | |
Number of page(s) | 15 | |
DOI | https://doi.org/10.1051/epjpv/2024030 | |
Published online | 21 October 2024 |
https://doi.org/10.1051/epjpv/2024030
Original Article
Influence of passivating interlayers on the carrier selectivity of MoOx contacts for c-Si solar cells
1
TNO Energy Transition Solar Energy, P.O. Box 15, NL-1755 ZG Petten, The Netherlands
2
Delft University of Technology, PVMD group, Mekelweg 4, NL-2628 CD Delft, The Netherlands
3
AIKO Energy Netherlands B.V. (Eironn Netherlands B.V.), Schiphol Boulevard 201, Tower D6, 1118 BG Schiphol, The Netherlands
* e-mail: m.t.s.k.ahsen@tudelft.nl
Received:
20
February
2024
Accepted:
4
September
2024
Published online: 21 October 2024
The application of molybdenum oxide (MoOx) as a hole-selective contact for silicon-based solar cells has been explored due to superior optical transmittance and potentially leaner manufacturing compared to fully amorphous silicon-based heterojunction (SHJ) devices. However, the development of MoOx contacts has been hampered by their poor thermal stability, resulting in a carrier selectivity loss and an S-shaped IV curve. The aim of this study is to understand the influence of different passivating interlayers on the carrier selectivity of hole-selective MoOx contacts for crystalline silicon (c-Si) solar cells. We highlight the effect of different interlayers on the surface passivation quality, contact selectivity, and the thermal stability of our MoOx-contacted devices. The interlayers studied are intrinsic hydrogenated amorphous silicon (a-Si:H(i)), thermally grown ultrathin SiO2, and a stack consisting of an ultrathin SiOy and Al2O3 layer. Additionally, we simulate the interacting interlayer properties on the carrier selectivity of our MoOx contacts using a simplified model. Among these interlayers, the Al2O3/SiOy stack shows to be a promising alternative to SiO2 by enabling efficient transport of holes while being able to sustain an annealing temperature of at least 250 °C underlining its potential in module manufacturing and outdoor operation.
Key words: MoOx hole-selective contact / surface passivation / passivating interlayers / metal oxide / c-Si solar cells
© M.T.S.K. Sen et al., Published by EDP Sciences, 2024
This is an Open Access article distributed under the terms of the Creative Commons Attribution License (https://creativecommons.org/licenses/by/4.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
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