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Fig. 9
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Simulated effect of varying µh (10−2–10−7cm2V−1s−1) and hole WF contact (4.92–5.34 eV) (a) on ΔVoc, (b) and on FF. Seff is set to 33 cm/s which is representative of the surface passivation quality of Al2O3/SiOy and SiO2 interlayers with a MoOx contact. Electron mobility of the interlayer is set to 10−5 cm2V−1s−1.
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