| Issue |
EPJ Photovolt.
Volume 17, 2026
Special Issue on ‘Recent Advances in Photovoltaics 2025, edited by Marie Gueunier Farret, Judikaël Le Rouzo and Thomas Fix’
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|---|---|---|
| Article Number | 27 | |
| Number of page(s) | 11 | |
| DOI | https://doi.org/10.1051/epjpv/2026020 | |
| Published online | 03 July 2026 | |
- D. Yan, A. Cuevas, J.I. Michel, C. Zhang, Y. Wan, X. Zhang, J. Bullock, Polysilicon passivated junctions: the next technology for silicon solar cells?, Joule 5, 811 (2021). https://doi.org/10.1016/j.joule.2021.02.013 [Google Scholar]
- F. Feldmann, M. Bivour, C. Reichel, M. Hermle, S.W. Glunz, Passivated rear contacts for high-efficiency n-type Si solar cells providing high interface passivation quality and excellent transport characteristics, Sol. Energy Mater. Sol. Cells 120, 270 (2014). https://doi.org/10.1016/j.solmat.2013.09.017 [Google Scholar]
- VDMA, International Technology Roadmap for Photovoltaic (ITRPV), 16th ed. (VDMA, Frankfurt, 2025) [Google Scholar]
- A. Richter, J. Benick, F. Feldmann, A. Fell, M. Hermle, S.W. Glunz, n-Type Si solar cells with passivating electron contact: identifying sources for efficiency limitations by wafer thickness and resistivity variation, Sol. Energy Mater. Sol. Cells 173, 96 (2017). https://doi.org/10.1016/j.solmat.2017.05.042 [Google Scholar]
- P. Zheng, S.P. Phang, J. Yang, Z. Wang, J. Chen, E.-C. Wang, J. Stuckelberger, H.C. Sio, X. Zhang, D. Macdonald, H. Jin, Polysilicon passivating contacts in mass production: The pursuit of higher efficiencies, IEEE J. Photovolt. 14, 80 (2024). https://doi.org/10.1109/JPHOTOV.2023.3329642 [Google Scholar]
- F. Feldmann, M. Bivour, C. Reichel, H. Steinkemper, M. Hermle, S.W. Glunz, Tunnel oxide passivated contacts as an alternative to partial rear contacts, Sol. Energy Mater. Sol. Cells 131, 46 (2014). https://doi.org/10.1016/j.solmat.2014.06.015 [CrossRef] [Google Scholar]
- R. Basnet, D. Yan, D. Kang, M.M. Shehata, P. Phang, T. Truong, J. Bullock, H. Shen, D. Macdonald, Current status and challenges for hole-selective poly-silicon based passivating contacts, Appl. Phys. Rev. 11, 011311 (2024). https://doi.org/10.1063/5.0185379 [Google Scholar]
- F. Feldmann, J. Schön, J. Niess, W. Lerch, M. Hermle, Studying dopant diffusion from poly-Si passivating contacts, Sol. Energy Mater. Sol. Cells 200, 109978 (2019). https://doi.org/10.1016/j.solmat.2019.109978 [Google Scholar]
- Y.J. Oh, H.-K. Noh, K.J. Chang, First-principles study of the segregation of boron dopants near the interface between crystalline Si and amorphous SiO2, Phys. B Condens. Matter 407, 2989 (2012). https://doi.org/10.1016/j.physb.2011.08.050 [Google Scholar]
- A.S. Kale, W. Nemeth, H. Guthrey, S.U. Nanayakkara, V. LaSalvia, S. Theingi, D. Findley, M. Page, M. Al-Jassim, D.L. Young, P. Stradins, S. Agarwal, Effect of crystallographic orientation and nanoscale surface morphology on poly-Si/SiOx contacts for silicon solar cells, ACS Appl. Mater. Interfaces 11, 42021 (2019). https://doi.org/10.1021/acsami.9b11889 [Google Scholar]
- B.W.H. van de Loo, B. Macco, M. Schnabel, M.K. Stodolny, A.A. Mewe, D.L. Young, W. Nemeth, P. Stradins, W.M.M. Kessels, On the hydrogenation of poly-Si passivating contacts by Al2O3 and SiNx thin films, Sol. Energy Mater. Sol. Cells 215, 110592 (2020). https://doi.org/10.1016/j.solmat.2020.110592 [CrossRef] [Google Scholar]
- S.W. Glunz, F. Feldmann, SiO2 surface passivation layers – a key technology for silicon solar cells, Sol. Energy Mater. Sol. Cells 185, 260 (2018). https://doi.org/10.1016/j.solmat.2018.04.029 [Google Scholar]
- D. Yan, A. Cuevas, J. Bullock, Y. Wan, C. Samundsett, Phosphorus-diffused polysilicon contacts for solar cells, Sol. Energy Mater. Sol. Cells 142, 75 (2015). https://doi.org/10.1016/j.solmat.2015.06.001 [Google Scholar]
- J.-I. Polzin, S. Lange, S. Richter, A. Moldovan, M. Bivour, C. Hagendorf, M. Hermle, S.W. Glunz, F. Feldmann, Temperature-induced stoichiometric changes in thermally grown interfacial oxide in tunnel-oxide passivating contacts, Sol. Energy Mater. Sol. Cells 218, 110713 (2020). https://doi.org/10.1016/j.solmat.2020.110713 [Google Scholar]
- A. Moldovan, F. Feldmann, M. Zimmer, J. Rentsch, J. Benick, M. Hermle, Tunnel oxide passivated carrier-selective contacts based on ultra-thin SiO2 layers, Sol. Energy Mater. Sol. Cells 142, 123 (2015). https://doi.org/10.1016/j.solmat.2015.06.048 [Google Scholar]
- X. Guo, M. Liao, Z. Rui, Q. Yang, Z. Wang, C. Shou, W. Ding, X. Luo, Y. Cao, J. Xu, L. Fu, Y. Zeng, B. Yan, J. Ye, Comparison of different types of interfacial oxides on hole-selective p+-poly-Si passivated contacts for high-efficiency c-Si solar cells, Sol. Energy Mater. Sol. Cells 210, 110487 (2020). https://doi.org/10.1016/j.solmat.2020.110487 [Google Scholar]
- Y. Ou, H. Du, N. Lin, Z. Liu, W. Liu, M. Liao, Z. Yang, S. Huang, Y. Zeng, J. Ye, Boron-doped polysilicon passivating contacts achieving a single-sided J0 of 4.0 fA/cm2 through a two-step oxidation process, Prog. Photovolt. Res. Appl. 33, 531 (2025). https://doi.org/10.1002/pip.3884 [Google Scholar]
- A.S. Kale, W. Nemeth, S.P. Harvey, M. Page, D.L. Young, S. Agarwal, P. Stradins, Effect of silicon oxide thickness on polysilicon based passivated contacts for high-efficiency crystalline silicon solar cells, Sol. Energy Mater. Sol. Cells 185, 270 (2018). https://doi.org/10.1016/j.solmat.2018.05.011 [Google Scholar]
- M.K. Stodolny, J. Anker, C.J.J. Tool, M. Koppes, A.A. Mewe, P. Manshanden, M. Lenes, I.G. Romijn, Novel schemes of p+ poly-Si hydrogenation implemented in industrial 6’-inch bifacial front-and-rear passivating contacts solar cells, in Proceedings of the 35th European Photovoltaic Solar Energy Conference and Exhibition, Brussels, Belgium (WIP Renewable Energies, Munich, 2018), p. 414 [Google Scholar]
- A. Damm, M. Bories, J. Benick, M. Hanser, A. Richter, A. Liu, Z. Yang, S. Lange, P.-T. Miclea, J.-I. Polzin, Hydrogenation characteristics of p-type poly-Si passivating contacts on textured surface for double-sided TOPCon devices, Sol. Energy Mater. Sol. Cells 285, 113542 (2025). https://doi.org/10.1016/j.solmat.2025.113542 [Google Scholar]
- A. Aberle, S. Glunz, W. Warta, J. Kopp, J. Knobloch, SiO2-passivated high efficiency silicon solar cells: Process dependence of Si-SiO2 interface recombination, in Proceedings of the 10th European Photovoltaic Solar Energy Conference, Lisbon, Portugal (Kluwer Academic Publishers, Dordrecht, 1991), p. 631. https://doi.org/10.1007/978-94-011-3622-8_161. [Google Scholar]
- R.A. Sinton, A. Cuevas, Contactless determination of current–voltage characteristics and minority-carrier lifetimes in semiconductors from quasi-steady-state photoconductance data, Appl. Phys. Lett. 69, 2510 (1996). https://doi.org/10.1063/1.117723 [CrossRef] [Google Scholar]
- D.E. Kane, R.M. Swanson, Measurement of the emitter saturation current by a contactless photoconductivity decay method, in Proceedings of the 18th IEEE Photovoltaic Specialists Conference, Las Vegas, USA (IEEE, New York, 1985), p. 578 [Google Scholar]
- T. Trupke, R.A. Bardos, M.C. Schubert, W. Warta, Photoluminescence imaging of silicon wafers, Appl. Phys. Lett. 89, 044107 (2006). https://doi.org/10.1063/1.2234747 [CrossRef] [Google Scholar]
- K.R. McIntosh, P.P. Altermatt, A freeware 1D emitter model for silicon solar cells, in Proceedings of the 35th IEEE Photovoltaic Specialists Conference, Honolulu, USA (IEEE, New York, 2010), p. 2188. https://doi.org/10.1109/PVSC.2010.5616124. [Google Scholar]
- G.E. Jellison, M.F. Chisholm, S.M. Gorbatkin, Optical functions of chemical vapor deposited thin-film silicon determined by spectroscopic ellipsometry, Appl. Phys. Lett. 62, 3348 (1993). https://doi.org/10.1063/1.109067 [Google Scholar]
- A.R. Varghese, R. Basnet, K.C. Fong, S.P. Phang, C. Samundsett, S. Armand, F. Kermer, F. Brink, D. Macdonald, High resolution study of thermal interfacial oxides in doped polycrystalline silicon passivating contacts, Sol. Energy Mater. Sol. Cells 293, 113829 (2025). https://doi.org/10.1016/j.solmat.2025.113829 [Google Scholar]
- Y. Zhao, P. Procel, C. Han, L. Mazzarella, G. Yang, A. Weeber, M. Zeman, O. Isabella, Design and optimization of hole collectors based on nc-SiO:H for high-efficiency silicon heterojunction solar cells, Sol. Energy Mater. Sol. Cells 219, 110779 (2021). https://doi.org/10.1016/j.solmat.2020.110779 [Google Scholar]
- G.L. Vick, K.M. Whittle, Solid solubility and diffusion coefficients of boron in silicon, J. Electrochem. Soc. 116, 1142 (1969). https://doi.org/10.1149/1.2412239 [Google Scholar]
- D. Muñoz Cervantes, Silicon heterojunction solar cells obtained by Hot-Wire CVD, PhD thesis, Universitat Politècnica de Catalunya, 2008. https://doi.org/10.5821/dissertation-2117-93666. [Google Scholar]
- G. Harbeke, L. Krausbauer, E.F. Steigmeier, A.E. Widmer, H.F. Kappert, G. Neugebauer, Growth and physical properties of LPCVD polycrystalline silicon films, J. Electrochem. Soc. 131, 675 (1984). https://doi.org/10.1149/1.2115672 [Google Scholar]
- S. Deng, Y. Cai, U. Roemer, F.-J. Ma, F. Rougieux, J. Huang, Y. Cheng, M.A. Green, N. Song, Mitigating parasitic absorption in poly-Si contacts for TOPCon solar cells: a comprehensive review, Sol. Energy Mater. Sol. Cells 267, 112704 (2024). https://doi.org/10.1016/j.solmat.2024.112704 [Google Scholar]
- J. Stuckelberger, D. Yan, S.P. Phang, C. Samundsett, J. Wang, L. Antognini, F.-J. Haug, Z. Wang, J. Yang, P. Zheng, X. Zhang, D. Macdonald, Pre-annealing for improved LPCVD deposited boron-doped poly-Si hole-selective contacts, Sol. Energy Mater. Sol. Cells 251, 112123 (2023). https://doi.org/10.1016/j.solmat.2022.112123 [Google Scholar]
- W. Chen, Y. Yu, W. Wang, P. Chen, Y. Ke, W. Liu, Y. Wan, Influence of rear surface pyramid base microstructure on industrial n-TOPCon solar cell performances, Sol. Energy 247, 24 (2022). https://doi.org/10.1016/j.solener.2022.10.017 [Google Scholar]
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