Table 2
Most important simulation input parameters based on measurement data of test structures, which represent the process flow and parameters used for the fabrication of the solar cells.
| Input parameter | Value | |
|---|---|---|
| General properties | Wafer size #BB τbulk |
M6 6BB 3 ms |
| Rear pattern | Pitch Wbase Wemi Wgap |
800 μm 290 μm 360 μm 75 μm |
| Surface recombination | J0,pass, (n) poly-Si J0,pass, (p) poly-Si J0,pass,gap/front |
1 fA/cm2 10 fA/cm2 13 fA/cm2 |
| Metal recombination | J0,met, (n) poly-Si J0,met, (p) poly-Si |
50 fA/cm2 500 fA/cm2 |
| Sheet resistance | Rsheet, (n) poly-Si Rsheet, (p) poly-Si Rsheet,gap/front |
55 Ω/sq 175 Ω/sq 490 Ω/sq |
| Resistivity | ρc, (n) poly-Si ρc, (p) poly-Si |
0.9 mΩcm2 2.8 mΩcm2 |
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