Table 2
Etch rate calculated from removal time of 80 nm n-TOPCon on textured samples on SiNx within different KOH solutions without HF dip and with HF dip prior to KOH at 70 °C. Etching selectivity is the ratio between the poly-Si etch rate and effective etch rate (initial oxide etch rate and poly-Si etch rate).
| Crystallinity | Effective etch rate1 w/o HF (nm/s) | Poly-Si etch rate w/ HF dip before (nm/s) | Etching selectivity | ||||
|---|---|---|---|---|---|---|---|
| 7% KOH | 3% KOH/Add | 7% KOH | 3% KOH/Add | 7% KOH | 3% KOH/Add | ||
| LPCVD | |||||||
| As deposited | poly-Si | 1.6 | 0.7 | 8.0 | 8.0 | 5:1 | 12:1 |
| Annealed | poly-Si | 0.5 | <0.1 | 4.0 | 4.0 | 8:1 | >30:1 |
| Ex-situ 2,3 | poly-Si | 10 2 | 16 3 | ||||
| PECVD | |||||||
| As deposited | a-Si | 1.1 | 0.3 | 4.0 | 2.7 | 4:1 | 8:1 |
| Annealed | poly-Si | 0.4 | <0.1 | 2.0 | 2.0 | 6:1 | >15:1 |
| As deposited4 | a-Si | 7 4 | |||||
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