Fig. 7


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IV parameters for i-TOPCon solar cells (n-type Cz-Si, M2) after LECO treatment for a first experiment (1) with LPCVD in-situ and ex-situ doped poly-Si and for a second experiment (2) with “in-situ annealed” LPCVD and PECVD layers. Poly-Si wrap-around removal has been achieved applying ADE (atmospheric dry etching), alkaline batch or inline processes. Mean ± standard deviation.

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