Volume 7, 2016
|Number of page(s)||9|
|Section||Semiconductor Thin Films|
|Published online||23 September 2016|
Effect of Cu content and temperature on the properties of Cu2ZnSnSe4 solar cells
1 Department of Electrical Engineering (ESAT), KU Leuven, Kasteelpark Arenberg 10, 3001 Heverlee, Belgium
2 Institute for Material Research (IMO) Hasselt University, Wetenschapspark 1, 3590 Diepenbeek, Belgium
3 Department of Materials Engineering (MTM), KU Leuven, Kasteelpark Arenberg 44, 3001 Heverlee, Belgium
4 imec division IMOMEC – partner in Solliance, Wetenschapspark 1, 3590 Diepenbeek, Belgium
5 Qatar Environment and Energy Research Institute (QEERI), Qatar Foundation, Doha, Qatar
6 imec – partner in Solliance, Kapeldreef 75, 3001 Leuven, Belgium
Received: 18 April 2016
Accepted: 29 June 2016
Published online: 23 September 2016
The complexity involved in obtaining pure Kesterite Cu2ZnSnSe4 (CZTSe) thin film primarily arises due to its narrow region of stability, leading to the presence of unavoidable binary selenides of the constituent metals. This study offers an insight on the formation of Cu selenides when the amount of Cu is varied in the precursor from Cu poor to Cu rich. The amount of Cu selenides was found to decrease when the composition of CZTSe absorber approached Cu rich conditions but functional devices were not obtained. Detailed characterizations also showed that the Cu and Sn binary phases were present at the backside interface of CZTSe solar cells. However with an increase in the selenization temperature it was found that the amount of Cu selenides and other secondary phases could be drastically minimized or even eliminated leading to high efficiency devices.
© Sahayaraj et al., published by EDP Sciences, 2016
This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/4.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
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