Issue |
EPJ Photovolt.
Volume 7, 2016
|
|
---|---|---|
Article Number | 70303 | |
Number of page(s) | 5 | |
Section | Semiconductor Thin Films | |
DOI | https://doi.org/10.1051/epjpv/2016001 | |
Published online | 26 February 2016 |
https://doi.org/10.1051/epjpv/2016001
Solution-processed In2S3 buffer layer for chalcopyrite thin film solar cells
1 Helmholtz-Zentrum Berlin für
Materialien und Energie, Hahn-Meitner-Platz 1, 14109
Berlin,
Germany
2 Qatar Environment and Energy Research
Institute and Hamad Bin Khalifa University, Education City,
Doha,
Qatar
3 Freie Universität
Berlin, Fachbereich Physik,
Arnimallee 14, 14195
Berlin,
Germany
a e-mail: lan.wang@helmholtz-berlin.de
Received:
4
December
2015
Accepted:
27
January
2016
Published online:
26
February
2016
We report a route to deposit In2S3 thin films from air-stable, low-cost molecular precursor inks for Cd-free buffer layers in chalcopyrite-based thin film solar cells. Different precursor compositions and processing conditions were studied to define a reproducible and robust process. By adjusting the ink properties, this method can be applied in different printing and coating techniques. Here we report on two techniques, namely spin-coating and inkjet printing. Active area efficiencies of 12.8% and 12.2% have been achieved for In2S3-buffered solar cells respectively, matching the performance of CdS-buffered cells prepared with the same batch of absorbers.
© Wang et al., published by EDP Sciences, 2016
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