On the ab initio calculation of vibrational formation entropy of point defect: the case of the silicon vacancy
EPJ Photovolt., 8 (2017) 85505
Published online: 2017-08-01
Articles citing this article
The Citing articles tool gives a list of articles citing the current article.
The citing articles come from EDP Sciences database, as well as other publishers participating in CrossRef Cited-by Linking Program. You can set up your personal account to receive an email alert each time this article is cited by a new article (see the menu on the right-hand side of the abstract page).
Cited article:
This article has been cited by the following article(s):
Vibrational density of states as an indicator of defect content in diamond: A molecular dynamics study
Daniel Castillo-Castro, Rafael I. González, Gonzalo García-Vidable, Felipe J. Valencia and Eduardo M. BringaDiamond and Related Materials 166 113705 (2026)
https://doi.org/10.1016/j.diamond.2026.113705
Atomistic model of an oxide film in contact with a liquid metal coolant: Defects concentrations and chemical potentials of dissolved Fe–O
Nikita A. Fominykh, Vsevolod P. Nikolskiy and Vladimir V. StegailovComputational Materials Science 220 112061 (2023)
https://doi.org/10.1016/j.commatsci.2023.112061
Point defects in hexagonal silicon
Lin Sun, Mário R. G. Marques, Miguel A. L. Marques and Silvana BottiPhysical Review Materials 5 (6) (2021)
https://doi.org/10.1103/PhysRevMaterials.5.064605
Vacancy-induced thermal transport in two-dimensional silicon carbide: a reverse non-equilibrium molecular dynamics study
A. S. M. Jannatul Islam, Md. Sherajul Islam, Naim Ferdous, Jeongwon Park and Akihiro HashimotoPhysical Chemistry Chemical Physics 22 (24) 13592 (2020)
https://doi.org/10.1039/D0CP00990C
Formation free energies of point defects and thermal expansion of bcc U and Mo
G S Smirnov and V V StegailovJournal of Physics: Condensed Matter 31 (23) 235704 (2019)
https://doi.org/10.1088/1361-648X/ab0e31