| Issue |
EPJ Photovolt.
Volume 11, 2020
Disordered Semiconductors and Photovoltaic Applications
|
|
|---|---|---|
| Article Number | 4 | |
| Number of page(s) | 5 | |
| Section | Semiconductor Thin Films | |
| DOI | https://doi.org/10.1051/epjpv/2020002 | |
| Published online | 10 February 2020 | |
- P. Roca i Cabarrocas, K.-H. Kim, R. Cariou, M. Labrune, E.V. Johnson, M. Moreno, A.T. Rios, S. Abolmasov, S. Kasouit, Low temperature plasma synthesis of nanocrystals and their application to the growth of crystalline silicon and germanium thin films, Mat. Res. Soc. Symp. Proc. 1426, 319 (2012) [CrossRef] [Google Scholar]
- W. Chen, G. Hamon, R. Leal, J.-L. Maurice, L. Largeau, P. Roca i Cabarrocas, Growth of tetragonal Si via plasma-enhanced epitaxy, Cryst. Growth Des. 17, 8 (2017) [Google Scholar]
- H. Le, F. Jardali, H. Vach, Deposition of hydrogenated silicon clusters for efficient epitaxial growth, Phys. Chem. Chem. Phys. 20, 15626 (2018) [PubMed] [Google Scholar]
- R. Cariou, M. Labrune, P. Roca i Cabarrocas, Thin crystalline silicon solar cells based on epitaxial films grown at 165 °C by RF PECVD, Solar Energy Mater. Sol. Cells 95, 2260 (2011) [CrossRef] [Google Scholar]
- R. Cariou, J. Tang, N. Ramay, R. Ruggeri, P. Roca i Cabarrocas, Low temperature epitaxial growth of SiGe absorber for thin film heterojunction solar cells, Sol. Energy Mater. Sol. Cells 134, 15 (2015) [Google Scholar]
- W. Chen, R. Cariou, M. Foldyna, V. Depauw, C. Trompoukis, E. Drouard, L. Lalouat, A. Harouri, J. Liu, A. Fave, R. Orobtchouk, F. Mandorlo, C. Seassal, I. Massiot, A. Dmitriev, K.-D. Lee, P. Roca i Cabarrocas, Nanophotonics-based low temperature PECVD epitaxial crystalline silicon solar cells, J. Phys. D Appl. Phys. 49, 12 (2016) [Google Scholar]
- R. Cariou, W. Chen, I. Cosme-Bolanos, J.-L. Maurice, M. Foldyna, V. Depauw, G. Patriarche, A. Gaucher, A. Cattoni, I. Massiot, S. Collin, E. Cadel, P. Pareige, P. Roca i Cabarrocas, Ultra-thin PECVD epitaxial Si solar cells on glass via low temperature transfer process, Prog. Photovolt. Res. Appl. 24, 1075 (2016) [CrossRef] [Google Scholar]
- S. Chakraborty, R. Cariou, M. Labrune, P. Roca i Cabarrocas, P. Chatterjee, Feasibility of using thin crystalline silicon films epitaxially grown at 165 °C in solar cells: A computer simulation study, EPJ Photovoltaics 4, 45103 (2013) [CrossRef] [EDP Sciences] [Google Scholar]
- P. Roca i Cabarrocas, J.B. Chévrier, J. Huc, A. Lloret, J.Y. Parey, J.P.M. Schmitt, A fully automated hot‐wall multiplasma‐monochamber reactor for thin film deposition, J. Vac. Sci. Technol. 9, 2331 (1991) [CrossRef] [Google Scholar]
- M. Moreno, P. Roca i Cabaroccas, Ultra-thin crystalline silicon films produced by plasma assisted epitaxial growth on silicon wafers and their transfer to foreign substrates, EPJ Photovoltaics 1, 10301 (2010) [CrossRef] [EDP Sciences] [Google Scholar]
- S.M. Sze, Physics of Semiconductor Devices, 2nd edn. (John Wiley & Sons, New Jersey, 1981) [Google Scholar]
- E.H. Rhoderick, Metal-semiconductor contacts, IEEE Proc. I Solid State Electron Dev. 129, 1 (1982) [CrossRef] [Google Scholar]
- D.L. Losee. Admittance spectroscopy of impurity levels in Schottky barriers, J. Appl. Phys. 46, 5 (1975) [Google Scholar]
Current usage metrics show cumulative count of Article Views (full-text article views including HTML views, PDF and ePub downloads, according to the available data) and Abstracts Views on Vision4Press platform.
Data correspond to usage on the plateform after 2015. The current usage metrics is available 48-96 hours after online publication and is updated daily on week days.
Initial download of the metrics may take a while.