Supplementary material

Figure S1 Comparison of the multi-resonant absorption with the step absorber characteristics as a function of the applied voltage. The case F = 150 is also shown in Figure 4.

Figure S2 (a) Comparison of the evolution of the temperature in open circuit with the thermalization coefficient Q in a black body and in a 10 nm-thick GaSb absorber with F = 150. (b) Corresponding chemical potential of the GaSb absorber.

Figure S3 Extracted current (per sun) as a function of the applied voltage for a thermalized GaAs cell in the radiative limit for different values of homogeneous absorptivity. The open circuit voltage is the same for each case.

Figure S4 (a) Chemical potential and (b) temperature of the radiation in open-circuit condition as a function of the thermalization coefficient Q, for different concentrations. The results are obtained for F = 150. The case C = 45 000 is also shown in Figure 2 (different scale).

Table S1 Parameters of conventional cells and HCSC obtained from the detailed balance calculation with .

© M. Giteau et al., published by EDP Sciences, 2019