Schematic representation of the integrated degradation storyline for the studied p-Si modules after 15 yr of field exposure. The diagram illustrates the two dominant and interacting pathways: (i) optical attenuation caused by photo-oxidation and yellowing of the EVA encapsulant, leading to uniform short-circuit current losses, and (ii) electrical resistance growth driven by acetic-acid-induced corrosion and delamination at interconnects, resulting in severe fill-factor reduction. Environmental stressors—light, heat, and moisture—initiate encapsulant hydrolysis, while localized protection under the aluminum-backed nameplate highlights the mitigating effect of moisture and oxygen barriers.