Table 4
Cell and module parameters for c-Si solar cell modules based on silicon heterojunction (SHJ) (reference) and poly-SiOx technologies. Parameters for both single junction (SJ) and tandem structures are given below. Thickness of c-Si is fixed to 160 μm, while the perovskite thickness has been adjusted to obtain photocurrent density (Jph) matching at STC. For 2T, Jph,top = Jph,bottom, while the bandgap of perovskite is 1.68 eV.
| Cell type | Perovskite thickness [nm] | Silicon thickness [µm] | Photo-current density Jph,top, Jph,bottom (mA/cm2) | Rear side photo-current density (mA/cm2) | STC power [Wp] | STC module efficiency [%] |
|---|---|---|---|---|---|---|
| SHJ SJ | n.a. | 160 | 37.8 | – | 323 | 20.5 |
| Poly-SiOx SJ | n.a. | 160 | 37.4 | – | 260 | 16.5 |
| 2T SHJ Tandem | 700 | 160 | 19.9 | 35.7 | 455 | 28.9 |
| 2T Poly-SiOx Tandem | 550 | 160 | 19.5 | 34.8 | 421 | 26.7 |
| 4T SHJ Tandem | 700 | 160 | 18.4, 17.7 | – | 416 | 26.4 |
| 4T Poly-SiOx Tandem | 700 | 160 | 18.4, 17.4 | – | 382 | 24.3 |
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