Impact of high-temperature processing steps on the long-term stability of charge carrier lifetime in n-type FZ-silicon

Special Issue on ‘EU PVSEC 2024: State of the Art and Developments in Photovoltaics’, edited by Robert Kenny and Gabriele Eder

Open Access

Fig. 2

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IR absorption coefficient spectra of O_i (left) at 1132-1138 cm⁻¹ and of VH₄ (right) at 2223 cm⁻¹ for differently processed n-type FZ-Si samples. Additionally, a non-processed n-type FZ-Si sample is used as a comparison alongside the processed and fired reference sample. Since the two reference curves overlap, the line of the as-cut reference sample is dashed for better visualization.

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