Table 1
Overview of the round-robin members, their technology and TOPCon layer properties.
Description | ISE | IMEC | ISFH | ISC Konstanz | INES |
---|---|---|---|---|---|
Technique | PECVD | LPCVD | LPCVD | LPCVD | LPCVD |
Deposition tool | Centrotherm c.PLASMA |
Tempress SPECTRUM |
Centrotherm Europe 2000 |
Centrotherm | Semco Smartech |
Deposition side | single | both | both | both | both |
Doping process | in-situ | ex-situ, POCl3 diffusion |
in-situ | in-situ | ex-situ (PIII) |
Doping tool (only ex-situ) | Tempress SPECTRUM |
IBS Pulsion Solar |
|||
Interfacial oxide | thermal | thermal | chemical | chemical | thermal |
Poly-Si thickness | 150 nm | 160 nm | 200 nm | 150 nm | 200 nm |
Doping (cm−3) | 1.7 × 1020 | 2–3 × 1020 | 2 × 1020 | 2 × 1020 | 4–5 × 1020 |
Anneal temperature | 900 °C | 860 °C | 860 °C | 825 °C | 975 °C |
Capping layer | SiNx PECVD (75 nm) | SiNx PECVD (85 nm) | AlOx ALD, SiNx PECVD (10 nm, 80 nm) | SiNx PECVD (70 nm) | SiNx PECVD (70 nm) |
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