Table 1

Overview of the round-robin members, their technology and TOPCon layer properties.

Description ISE IMEC ISFH ISC Konstanz INES
Technique PECVD LPCVD LPCVD LPCVD LPCVD
Deposition tool Centrotherm
c.PLASMA
Tempress
SPECTRUM
Centrotherm
Europe 2000
Centrotherm Semco
Smartech
Deposition side single both both both both
Doping process in-situ ex-situ, POCl3
diffusion
in-situ in-situ ex-situ (PIII)
Doping tool (only ex-situ)   Tempress
SPECTRUM
    IBS Pulsion
Solar
Interfacial oxide thermal thermal chemical chemical thermal
Poly-Si thickness 150 nm 160 nm 200 nm 150 nm 200 nm
Doping (cm−3) 1.7 × 1020 2–3 × 1020 2 × 1020 2 × 1020 4–5 × 1020
Anneal temperature 900 °C 860 °C 860 °C 825 °C 975 °C
Capping layer SiNx PECVD (75 nm) SiNx PECVD (85 nm) AlOx ALD, SiNx PECVD (10 nm, 80 nm) SiNx PECVD (70 nm) SiNx PECVD (70 nm)

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