ALD-ZnMgO and absorber surface modifications to substitute CdS buffer layers in co-evaporated CIGSe solar cells

Ramis Hertwig; Shiro Nishiwaki; Mario Ochoa; Shih-Chi Yang; Thomas Feurer; Evgeniia Gilshtein; Ayodhya N. Tiwari; Romain Carron

doi:10.1051/epjpv/2020010

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Volume 11 (2020)

EPJ Photovolt., 11 (2020) 12

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Chalcogenide Materials for Photovoltaics 2020

Open Access

Table 3

PV parameters of devices with KCN and CBD-CdS alike surface treatment, see Figures 3a and 3b. All devices have buffer layers of ALD deposited Zn_0.84Mg_0.16O, 28 nm.

	V _OC (mV)	J _SC (mA/cm²)	FF (%)	η (%)
H₂O + NH₄OH	453	34.7	64	10.0
NH₄OH	596	34.6	73	15.1
H₂O + NH₄OH + TU	625	33.61	73	15.3
NH₄OH + TMA	663	35.9	69	16.5

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