Table 1

PECVD growth conditions on both n++ and p++ substrates. The substrate temperature and RF power were fixed at 175 °C and 10 Watts, respectively. The H2 and SiH4 fluxes were set at 350 sccm and 5 sccm, respectively. Di refers to the inter-electrode distance in the PECVD reactor.

Sample Thickness (μm) Di (mm) Pressure (mTorr)
1 1.5 22 1950
2 1.14 22 1823
3 1.1 12 2300
4 1.3 12 2300

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