Table 4
Implied Voc of symmetric samples from Batches 3 and 4 for different passivation stacks on Cz and mono-cast wafers.
| Passivation stack | Cz | Mono-cast |
|---|---|---|
| SiOx\(p) μc-Si\SiNx:H | 647 mV | 648 mV |
| (i,n) a-Si:H | 673 mV | 670 mV |
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