Table 1
Device parameters (best cells) of CIGSe solar cells with standard CdS buffer, spin-coated (C-03, C-04, C-05 and C-06) and inkjet-printed (C-72, C-77) In2S3 buffers. Sample C-03 was prepared from the thiourea-free precursor, while C-04, C-05 and C-06 were spin-coated from precursors with varied In-S ratio 1:1, 1:2 and 1:3 respectively. C-72 was prepared with the buffer annealed only in argon atmosphere (without H2S), while C-77 was annealed in H2S-containing atmosphere.
| Sample | In/S | Voc | Jsc | FF | η |
| ratio | (mV) | (mA/cm2) | (%) | (%) | |
|
|
|||||
| CdS | − | 511 | 39.1 | 63 | 12.5 |
| C-03 | − | 389 | 39.6 | 49 | 7.6 |
| C-04 | 1:1 | 478 | 39.9 | 55 | 10.4 |
| C-05 | 1:2 | 491 | 39.2 | 66 | 12.8 |
| C-06 | 1:3 | 485 | 38.6 | 61 | 11.5 |
| C-72 | 1:2 | 458 | 37.5 | 63 | 10.8 |
| C-77 | 1:2 | 481 | 38.6 | 65 | 12.2 |
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