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Table 3

PC1D parameters and simulation results. The parameters device area, base contact, thickness, p-type background doping and first rear diffusion were chosen according to cell Gra. C-5. *The parameters were varied for fitting IQE.

Parameters Results Units

Input Device area 4 cm2
Base contact 0.7125 Ω
Thickness 40 μm
p-type background doping 2 × 1016 cm-3
Sheet Resistance 112 Ω /square
1st rear diffusion 4 × 1018 cm-3
Bulk recombination* 0.2 μs
Front surface recombination* 8 × 105 cm/s

Output Isc 0.103 A
Voc 567.9 mV
Efficiency 10.15 %

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