| Issue |
EPJ Photovolt.
Volume 6, 2015
|
|
|---|---|---|
| Article Number | 60301 | |
| Number of page(s) | 7 | |
| Section | Semiconductor Thin Films | |
| DOI | https://doi.org/10.1051/epjpv/2015005 | |
| Published online | 21 May 2015 | |
https://doi.org/10.1051/epjpv/2015005
Recrystallized thin-film silicon solar cell on graphite substrate with laser single side contact and hydrogen passivation
1 Bavarian Center for Applied Energy Research (ZAE Bayern), Haberstr. 2a, 91058 Erlangen, Germany
2 Department of Physics, University of Konstanz, Box 676, 78457 Konstanz, Germany
3 Institute of Materials for Electronics and Energy Technology (i-MEET), University of Erlangen-Nuremberg, Martensstr. 7, 91058 Erlangen, Germany
a
e-mail: da.li@zae-bayern.de
Received: 15 January 2015
Accepted: 4 May 2015
Published online: 21 May 2015
Laser single side contact formation (LSSC) and the hydrogen passivation process are studied and developed for crystalline silicon thin film (CSiTF) solar cells on graphite substrates. The results demonstrate that these two methods can improve cell performance by increasing the open circuit voltage and fill factor. In comparison with our previous work, we have achieved an increase of 3.4% absolute cell efficiency for a 40 μm thick 4 cm2 aperture area silicon thin film solar cell on graphite substrate. Current density-voltage (J-V) measurement, quantum efficiency (QE) and light beam induced current (LBiC) are used as characterization methods.
© Li et al., published by EDP Sciences, 2015
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