Table 2
Initial photovoltaic parameters of pm-Si:H p-i-n devices fabricated on three different TCO substrates. All the cells incorporate the same p-μc-SiO:H, i-pm-Si:H (250 nm) and n-μc-Si:H layers and sputtered ZnO-Ag back contacts.
| Sample # | TCO/p-layer | FF | V OC | J SC | Eff. |
| description | (%) | (V) | (mA/cm2) | (%) | |
|
|
|||||
| 1301245I | LPCVD ZnO | 68.54 | 0.903 | 14.83 | 9.2 |
| μc-SiOxp-layer #2 | |||||
|
|
|||||
| 1301245J | sp-e ZnO | 61.09 | 0.918 | 13.54 | 7.6 |
| μc-SiOxp-layer #2 | |||||
|
|
|||||
| 1301245A | ASAHI SnO2 | 55.27 | 0.793 | 13.69 | 6.0 |
| μc-SiOxp-layer #2 | |||||
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