Table 2

Initial photovoltaic parameters of pm-Si:H p-i-n devices fabricated on three different TCO substrates. All the cells incorporate the same p-μc-SiO:H, i-pm-Si:H (250 nm) and n-μc-Si:H layers and sputtered ZnO-Ag back contacts.

Sample # TCO/p-layer FF V OC J SC Eff.
description (%) (V) (mA/cm2) (%)

1301245I LPCVD ZnO 68.54 0.903 14.83 9.2
μc-SiOxp-layer #2

1301245J sp-e ZnO 61.09 0.918 13.54 7.6
μc-SiOxp-layer #2

1301245A ASAHI SnO2 55.27 0.793 13.69 6.0
μc-SiOxp-layer #2

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