| Issue |
EPJ Photovolt.
Volume 5, 2014
Topical issue: Photovoltaic Technical Conference (PVTC 2013)
|
|
|---|---|---|
| Article Number | 55206 | |
| Number of page(s) | 6 | |
| DOI | https://doi.org/10.1051/epjpv/2014007 | |
| Published online | 16 July 2014 | |
https://doi.org/10.1051/epjpv/2014007
Substrate and p-layer effects on polymorphous silicon solar cells
1
LPICM, CNRS, École Polytechnique, 91128
Palaiseau,
France
2
Institute of Physics, ASCR v.v.i. Cukrovarnická,
Prague, Czech
Republic
a
e-mail:
sergey.abolmasov@polytechnique.edu
Received:
30
July
2013
Accepted:
11
June
2014
Published online:
16
July
2014
The influence of textured transparent conducting oxide (TCO) substrate and p-layer on the performance of single-junction hydrogenated polymorphous silicon (pm-Si:H) solar cells has been addressed. Comparative studies were performed using p-i-n devices with identical i/n-layers and back reflectors fabricated on textured Asahi U-type fluorine-doped SnO2, low-pressure chemical vapor deposited (LPCVD) boron-doped ZnO and sputtered/etched aluminum-doped ZnO substrates. The p-layers were hydrogenated amorphous silicon carbon and microcrystalline silicon oxide. As expected, the type of TCO and p-layer both have a great influence on the initial conversion efficiency of the solar cells. However they have no effect on the defect density of the pm-Si:H absorber layer.
© Abolmasov et al., published by EDP Sciences, 2014
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