Table 1
Initial photovoltaic parameters of pm-Si:H p-i-n devices fabricated on three different TCO substrates along with the absorption coefficient and the Urbach energy of their intrinsic pm-Si:H layer. All the cells incorporate the same i-pm-Si:H (300 nm) and n-a-Si:H layers and evaporated Al back contacts.
Sample # | TCO/p-layer | α (1.2 eV) | E U | FF | V OC | J SC | Eff. |
description | (cm-1) | (meV) | (%) | (V) | (mA/cm2) | (%) | |
|
|||||||
1207271 | ASAHI SnO2 (ref) | 0.15 ± 0.03 | 39.9 ± 2 | 71.77 | 0.868 | 12.65 | 7.88 |
a-SiC p-layer | |||||||
|
|||||||
1208071I | LPCVD ZnO | 0.18 ± 0.02 | 39.6 ± 0.8 | 69.71 | 0.853 | 11.19 | 6.65 |
μc-SiOxp-layer #1 | |||||||
|
|||||||
1208071J | sp-e ZnO | 0.13 ± 0.05 | 37.8 ± 1.5 | 66.23 | 0.881 | 10.08 | 5.88 |
μc-SiOxp-layer #1 |
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