Table 1

Initial photovoltaic parameters of pm-Si:H p-i-n devices fabricated on three different TCO substrates along with the absorption coefficient and the Urbach energy of their intrinsic pm-Si:H layer. All the cells incorporate the same i-pm-Si:H (300 nm) and n-a-Si:H layers and evaporated Al back contacts.

Sample # TCO/p-layer α (1.2 eV) E U FF V OC J SC Eff.
description (cm-1) (meV) (%) (V) (mA/cm2) (%)

1207271 ASAHI SnO2 (ref) 0.15 ± 0.03 39.9 ± 2 71.77 0.868 12.65 7.88
a-SiC p-layer

1208071I LPCVD ZnO 0.18 ± 0.02 39.6 ± 0.8 69.71 0.853 11.19 6.65
μc-SiOxp-layer #1

1208071J sp-e ZnO 0.13 ± 0.05 37.8 ± 1.5 66.23 0.881 10.08 5.88
μc-SiOxp-layer #1

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