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(a) Dark conductivity (at room temperature) of p-type silicon oxide thin films as a function of CO2 flow rate (the films were grown on Corning glass at H2 (500 sccm)/SiH4 (10 sccm) =50 and with 2% B(CH in H2) and (b) evolution of SiO2, a-Si and μc-Si volume fractions of optimized μc-SiO:H p-layer with increasing CO2 flow rate, as deduced from the BEMA modeling.
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