Influence of chamber condition on the (initial) I-V characteristics of a-Si:H p-i-n single junction cells deposited on ZnO:Al front TCO. Data is averaged over 60 1-cm2 solar cells.
|Chamber conditioning||J sc||V oc||FF||η|
|p-type a-Si:H||14.5 ± 0.1||912 ± 7||68 ± 2||9.0 ± 0.3|
|p-type μc-Si:H||14.5 ± 0.1||925 ± 6||69 ± 2||9.3 ± 0.3|
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