| Issue |
EPJ Photovolt.
Volume 5, 2014
Topical issue: Photovoltaic Technical Conference (PVTC 2013)
|
|
|---|---|---|
| Article Number | 55202 | |
| Number of page(s) | 9 | |
| DOI | https://doi.org/10.1051/epjpv/2013028 | |
| Published online | 05 February 2014 | |
https://doi.org/10.1051/epjpv/2013028
Plasma monitoring and PECVD process control in thin film silicon-based solar cell manufacturing
1 PVcomB, Helmholtz-Zentrum Berlin für
Materialien und Energie GmbH, Schwarzschildstr. 3, 12489
Berlin,
Germany
2 Plasmetrex GmbH, Schwarzschildstr. 3,
12489
Berlin,
Germany
a
e-mail: onno.gabriel@helmholtz-berlin.de
Received:
30
July
2013
Accepted:
10
December
2013
Published online:
5
February
2014
A key process in thin film silicon-based solar cell manufacturing is plasma enhanced chemical vapor deposition (PECVD) of the active layers. The deposition process can be monitored in situ by plasma diagnostics. Three types of complementary diagnostics, namely optical emission spectroscopy, mass spectrometry and non-linear extended electron dynamics are applied to an industrial-type PECVD reactor. We investigated the influence of substrate and chamber wall temperature and chamber history on the PECVD process. The impact of chamber wall conditioning on the solar cell performance is demonstrated.
© Gabriel et al., published by EDP Sciences, 2014
This is an Open Access article distributed under the terms of the Creative
Commons Attribution License (http://creativecommons.org/licenses/by/4.0), which permits unrestricted
use, distribution, and reproduction in any medium, provided the original work is
properly cited.
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