Wavelengths of line and band transitions of electronically excited atoms, radicals and molecules detected by OES during a-Si:H/μc-Si:H deposition and Ar/NF3 plasma chamber cleaning.
|Si||3s23p21D 2 − s23p4s1P° 1||288.3 nm|
|SiH||X2Π – A2Δ band||409−422 nm|
|H||n = 3 − n = 2 (“Balmer Hα”)||656.3 nm|
|H||n = 4 − n = 2 (“Balmer Hβ”)||486.1 nm|
|H2||2 band (“Fulcher-α”)||570−640 nm|
|Ar||3s23p4(3P)4s2P P)4p2D°||496.5 nm|
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