Table 1
Wavelengths of line and band transitions of electronically excited atoms, radicals and molecules detected by OES during a-Si:H/μc-Si:H deposition and Ar/NF3 plasma chamber cleaning.
| Species | Transition | Wavelength |
|
|
||
| Si | 3s23p21D 2 − s23p4s1P° 1 | 288.3 nm |
| SiH | X2Π – A2Δ band | 409−422 nm |
| H | n = 3 − n = 2 (“Balmer Hα”) | 656.3 nm |
| H | n = 4 − n = 2 (“Balmer Hβ”) | 486.1 nm |
| H2 | 2 band (“Fulcher-α”) |
570−640 nm |
| F | 2s22p4(3P)3s2P   |
703.7 nm |
| Ar | 3s23p4(3P)4s2P  P)4p2D° |
496.5 nm |
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