Volume 12, 2021
EU PVSEC 2021: State of the Art and Developments in Photovoltaics
|Number of page(s)||6|
|Published online||09 November 2021|
Rear side dielectrics on interdigitating p+-(i)-n+ back-contact solar cells − hydrogenation vs. charge effects
Institute for Solar Energy Research Hamelin (ISFH), Am Ohrberg 1, 31860 Emmerthal, Germany
2 Institute of Electronic Materials and Devices, Leibniz Universität Hannover, Schneiderberg 32, 30167, Germany
3 Laboratory of Nano and Quantum Engineering, Leibniz Universität Hannover, Schneiderberg 39, 30167, Germany
4 Institute for Solid State Physics, Leibniz Universität Hannover, Appelstraße 2, 30167, Germany
* e-mail: email@example.com
Received in final form: 21 September 2021
Accepted: 22 October 2021
Published online: 9 November 2021
Polysilicon-on-oxide (POLO) passivating contacts and interdigitated back-contact (IBC) cell technologies have recently attracted a lot of interest as candidates for the implementation in the next generation of solar cells. An IBC cell with POLO junctions for both polarities − a POLO2-IBC cell − has to electrically isolate the highly defective p+ and n+ poly-Si regions on the rear side of the cell to avoid parasitic recombination. Inserting an initially undoped, intrinsic (i) region between the p+ and n+ poly-Si regions was demonstrated to successfully prevent the parasitic recombination in the transition region of ISFH's 26.1%-efficient POLO2-IBC cell. In order to further improve the conversion efficiency towards 27%, we apply hydrogen-donating dielectric layer stacks to the p+-(i)-n+ POLO interdigitating rear side to enhance the passivation quality of the POLO junctions. We indeed show a significant improvement of POLO junctions on symmetrical full-area homogenously doped reference samples, but when we apply a hydrogen-donating layer stack on the p+-(i)-n+ POLO interdigitating rear side, we observe a strong degradation in the performance of the POLO2-IBC cell. We attribute this to the formation of a conductive channel between the p+ and n+ poly-Si regions due to the strong negative charge density of the hydrogen-donating layer stack.
Key words: POLO / IBC / hydrogenation / charge / recombination / passivating contact / polysilicon
© M. Rienäcker et al., Published by EDP Sciences, 2021
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