Volume 8, 2017
Topical Issue: Theory and modelling
|Number of page(s)||6|
|Section||Theory and Modelling|
|Published online||24 March 2017|
Influence of Schottky contact on the C-V and J-V characteristics of HTM-free perovskite solar cells
1 UMR FOTON CNRS 6082, INSA, 35708 Rennes, France
2 Institute of Chemistry, Casali Center for Applied Chemistry, The Hebrew University of Jerusalem, Edmond J. Safra Campus, Givat Ram, 91904 Jerusalem, Israel
Received: 30 September 2016
Accepted: 3 January 2017
Published online: 24 March 2017
The influence of the Schottky contact is studied for hole transport material (HTM) free CH3NH3PbI3 perovskite solar cells (PSCs), by using drift-diffusion and small signal models. The basic current-voltage and capacitance-voltage characteristics are simulated in reasonable agreement with experimental data. The build in potential of the finite CH3NH3PbI3 layer is extracted from a Mott-Schottky capacitance analysis. Furthermore, hole collector conductors with work-functions of more than 5.5 eV are proposed as solutions for high efficiency HTM-free CH3NH3PbI3 PSCs.
© Y. Huang et al., published by EDP Sciences, 2017
This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/4.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
Current usage metrics show cumulative count of Article Views (full-text article views including HTML views, PDF and ePub downloads, according to the available data) and Abstracts Views on Vision4Press platform.
Data correspond to usage on the plateform after 2015. The current usage metrics is available 48-96 hours after online publication and is updated daily on week days.
Initial download of the metrics may take a while.