Issue
EPJ Photovolt.
Volume 13, 2022
EU PVSEC 2021: State of the Art and Developments in Photovoltaics
Article Number 3
Number of page(s) 10
DOI https://doi.org/10.1051/epjpv/2021014
Published online 17 January 2022
  1. https://itrpv.vdma.org/ [Google Scholar]
  2. F. Korsós, L. Roszol, F. Jay, J. Veirman, A.D. Draoua, M. Albaric, T. Szarvas, Z. Kiss, A. Szabó, I. Soczó, Gy. Nádudvari, N. Laurent, Efficiency limiting crystal defects in monocrystalline silicon and their characterization in production, Solar Energy Mater. Solar Cells 186, 217 (2018) [CrossRef] [Google Scholar]
  3. D.K. Schroder, Semiconductor Material and Device Characterization (Wiley, New York, 1990) [Google Scholar]
  4. R.A. Sinton, A. Cuevas, Contactless determination of current-voltage characteristics and minority-carrier lifetimes in semiconductors from quasi-steady-state photoconductance, Appl. Phys. Lett. 69, 2510 (1996) [CrossRef] [Google Scholar]
  5. T.S. Horányi, T. Pavelka, P. Tüttö, In situ bulk lifetime measurement on silicon with a chemically passivated surface, Appl. Surf. Sci. 63, 306 (1993) [CrossRef] [Google Scholar]
  6. S. Rein, T. Rehrl, W. Warta, S.W. Glunz, Lifetime spectroscopy for defect characterization: systematic analysis of the possibilities and restrictions, J. Appl. Phys. 91, 2059 (2002) [CrossRef] [Google Scholar]
  7. J. Schmidt, D. Macdonald, Recombination activity of iron-gallium and iron-indium pairs in silicon, J. Appl. Phys. 97, 113712 (2005) [CrossRef] [Google Scholar]
  8. J.D. Murphy, M. Al-Amin, K. Bothe, M. Olmo, V.V. Voronkov, R.J. Falster, The effect of oxide precipitates on minority carrier lifetime in n-type silicon, J. Appl. Phys. 118, 215706 (2015) [CrossRef] [Google Scholar]
  9. G. Paráda, F. Korsós, P. Tüttö, Transient Method for Lifetime Characterization of Monocrystalline Si Ingots, in 29th European Photovoltaic Solar Energy Conference and Exhibition (2014), pp. 1264–1266 [Google Scholar]
  10. S. Bowden, R.A. Sinton, Determining lifetime in silicon blocks and wafers with accurate expressions for carrier density, J. Appl. Phys. 102, 124501 (2007) [CrossRef] [Google Scholar]
  11. J.S. Swirhun, R.A. Sinton, M. Keith Forsyth, T. Mankad, Contactless measurement of minority carrier lifetime in silicon ingots and bricks, Progr. Photovolt. 19, 313 (2011) [CrossRef] [Google Scholar]
  12. M. Goodarzi, R. Sinton, D. Macdonald, Improving transient photoconductance lifetime measurements on ingots with deeper photogeneration, AIP Conf. Proc. 1999, 020008 (2018) [CrossRef] [Google Scholar]
  13. M. Goodarzi, R. Sinton, D. Macdonald, Quasi-steady-state photoconductance bulk lifetime measurements on silicon ingots with deeper photogeneration, AIP Adv. 9, 015128 (2019) [CrossRef] [Google Scholar]
  14. M. Goodarzi, R. Sinton, D. Chung, B. Mitchell, T. Trupke, D. Macdonald, A comparison between quasi-steady state and transient photoconductance lifetimes in silicon ingots: simulations and measurements, in IEEE 44th Photovoltaic Specialist Conference (PVSC) (2017), pp. 2707–2710 [CrossRef] [Google Scholar]
  15. P. Blood, J.W. Orton, The electrical characterisation of semiconductors, Rep. Prog. Phys. 41, 157 (1978) [CrossRef] [Google Scholar]
  16. J. Schmidt, Measurement of differential and actual recombination parameters on crystalline silicon wafers [solar cells, IEEE Trans. Electr. Dev. 46, 2018 (1999) [CrossRef] [Google Scholar]
  17. M.A. Green, Self-consistent optical parameters of intrinsic silicon at 300k including temperature coefficients, Solar Energy Mater. Solar Cells 92, 1305 (2008) [CrossRef] [Google Scholar]
  18. A. Richter, F. Werner, A. Cuevas, J. Schmidt, S.W. Glunz, Improved parameterization of auger recombination in silicon, Energy Procedia 27, 88 (2012) [CrossRef] [Google Scholar]
  19. F. Dannhauser, Die abhängigkeit der trägerbeweglichkeit in silizium von der konzentration der freien ladungsträger-i, Solid State Electr. 15, 1371 (1972) [CrossRef] [Google Scholar]
  20. J. Krausse, Die abhängigkeit der trägerbeweglichkeit in silizium von der konzentration der freien ladungsträger-ii, Solid State Electr. 15, 1377 (1972) [CrossRef] [Google Scholar]
  21. D. Macdonald, L.J. Geerligs, Recombination activity of interstitial iron and other transition metal point defects in p- and n-type crystalline silicon, Appl. Phys. Lett. 85, 4061 (2004) [CrossRef] [Google Scholar]

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