Fig. 8
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Measured metallization current density J0,met and contact resistivity rc of screen-printed Ag contacts on n-poly-Si layers capped with PECVD AlOx/SiN stack. Whereas LPCVD n-poly-Si layers result in high J0,met values and high rc values, PECVD n-poly-Si and in particular PVD n-poly-Si obtain low J0,met < 20 fA/cm2 and low rc < 3 mΩcm2 which is required for high POLO2 IBC conversion efficiencies.
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