Photoluminescence (PL) mapping of the carrier lifetime t of a M2-sized n-type Cz test wafer representing a POLO² IBC solar cell without metal contacts applying the novel process sequence in Figure 6 revealing a promising iV_oc = 735 mV. The n-poly-Si field in the upper left corner represents the n-poly-Si base area of the POLO² IBC cell with an excellent J_0,n-poly = 2 fA/cm² . The p-poly-Si/n-poly-Si field on the lower right represents the p-poly-Si/n-poly-Si emitter area of the POLO² IBC cell yielding a J_0,p-poly = 8 fA/cm² which is a bit higher than the best values in Figure 5.