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Table 1
The primary input parameters used in the Oghmanano simulation for the active layers.
| Electrical parameter | Binary | Ternary | Unit |
|---|---|---|---|
| Free carriers | |||
| Electron mobility | 1.50e-07 | 1.49e-07 | m2V−1s−1 |
| Hole mobility | 1.15e-07 | 1.42e-07 | m2V−1s−1 |
| Effective density of free electron states | 1e26 | 1e26 | m−3 |
| Effective density of free hole states | 1e26 | 1e26 | m−3 |
| Recombination rate constant | 1.77e-17 | 1.15e-17 | m3s−1 |
| Equilibrium SRH traps | |||
| n1, p1 | 1e20 | 1e20 | m−3 |
| τn, τp | 1e-15 | 1e-15 | s−1 |
| Non-equilibrium SRH traps | |||
| Free electron to trapped electron | 1e-15 | 1e-15 | m−2 |
| Trapped electron to free hole | 1e-20 | 1e-20 | m−2 |
| Trapped hole to free electron | 1e-20 | 1e-20 | m−2 |
| Free hole to trapped hole | 1e-15 | 1e-15 | m−3 |
| Electrostatics | |||
| χ | 4.2 | 4.2 | eV |
| Eg | 1.28 | 1.29 | eV |
| Relative permittivity | 3.0 | 3.0 | au |
| Excitons | |||
| Scattering length | 4.221e-8 | 4.272e-8 | m |
| Lifetime | 3.6e-10 | 3.6e-10 | s−1 |
| kpl | 2.78e9 | 2.78e9 | s−1 |
| kdis | 2.17e12 | 1.96e12 | s−1 |
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