Model for contact formation of novel TeO2 containing Pb-free silver paste on n+ and p+ doped crystalline silicon

Special Issue on ‘WCPEC-8: State of the Art and Developments in Photovoltaics’, edited by Alessandra Scognamiglio, Robert Kenny, Shuzi Hayase and Arno Smets

Open Access

Fig. 3

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SEM cross section images of a non-passivated sample for different RTP peak firing temperatures (400 °C left, 500 °C middle, 700 °C right). At 400 °C, there are large Te crystallites (bright blue arrow) as well as smaller Bi₂TeO₅ crystals (white arrows) visible, whereas the crystallization diminishes for higher peak temperatures. For 700 °C Te crystallites grown into the Si wafer are visible.

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