Impact of the contacting scheme on I-V measurements of metallization-free silicon heterojunction solar cells

Special Issue on ‘WCPEC-8: State of the Art and Developments in Photovoltaics’, edited by Alessandra Scognamiglio, Robert Kenny, Shuzi Hayase and Arno Smets

Open Access

Fig. 6

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(a) Simulated relative position of the voltage sense contact for a grn FF measurement depending on the TCO sheet resistances. (b) Relative error FF_e of the fill factor measurement when placing the sense contact at d_sp = 0.2 depending on number of wires used for contacting and sheet resistance of TCO.

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