Table 1

Input parameters and models for the simulated reference solar cell.

Cell design
Silicon Thickness 10 μm, p-type (2.1016 cm−3)
n + emitter Gaussian doping profile (2.1019 cm−3 peak doping, 100 nm decay length)
p + BSF Gaussian doping profile (2.1019 cm−3 peak doping, 100 nm decay length)
Front coating Silicon nitride, thickness 70 nm
Rear contact Full-area aluminium, thickness 300 nm
Front contact shading 4 %
Silicon nitride
Refractive index Vogt [21] up to 1.7 μm, Kischkat [22] beyond
Thermal conductivity 2.2 W.m−1.K−1 [23]
Silicon
Complex refractive index Green [24] for wavelengths below 1.2 μm, Fu [25] above
Thermal conductivity Glassbrenner [26]
Peltier coefficients π n  = π p = 0.5 V [27]
Carrier statistics Fermi-Dirac
Ionisation of dopants complete
Intrinsic carrier density Couderc [28]
Band gap energy Pässler [29]
Carrier mobility Klaassen [17]
Auger recombination Niewelt [30]
SRH lifetime 30 μs
Aluminium
Refractive index Rakic [31]
Thermal conductivity 243.0 W m−1 K−1 [32]
1

The Drude model used in reference [25] has been replaced by the model of Basu et al. [33] to better account for free carrier absorption in heavily doped regions.

Current usage metrics show cumulative count of Article Views (full-text article views including HTML views, PDF and ePub downloads, according to the available data) and Abstracts Views on Vision4Press platform.

Data correspond to usage on the plateform after 2015. The current usage metrics is available 48-96 hours after online publication and is updated daily on week days.

Initial download of the metrics may take a while.