A fully coupled opto-electro-thermal model to investigate silicon solar cells under real operating conditions

Special Issue on ‘Recent Advances in Spectroscopy and Microscopy of Thin-films Materials, Interfaces, and Solar Cells 2021', edited by A. Vossier, M. Gueunier-Farret, J.-P. Kleider and D. Mencaraglia

Open Access

Table 1

Input parameters and models for the simulated reference solar cell.

Cell design
Silicon	Thickness 10 μm, p-type (2.1016 cm−3)
n ⁺ emitter	Gaussian doping profile (2.1019 cm−3 peak doping, 100 nm decay length)
p ⁺ BSF	Gaussian doping profile (2.1019 cm−3 peak doping, 100 nm decay length)
Front coating	Silicon nitride, thickness 70 nm
Rear contact	Full-area aluminium, thickness 300 nm
Front contact shading	4 %
Silicon nitride
Refractive index	Vogt [21] up to 1.7 μm, Kischkat [22] beyond
Thermal conductivity	2.2 W.m⁻¹.K⁻¹ [23]
Silicon
Complex refractive index	Green [24] for wavelengths below 1.2 μm, Fu [25] above
Thermal conductivity	Glassbrenner [26]
Peltier coefficients	π _n = π _p = 0.5 V [27]
Carrier statistics	Fermi-Dirac
Ionisation of dopants	complete
Intrinsic carrier density	Couderc [28]
Band gap energy	Pässler [29]
Carrier mobility	Klaassen [17]
Auger recombination	Niewelt [30]
SRH lifetime	30 μs
Aluminium
Refractive index	Rakic [31]
Thermal conductivity	243.0 W m⁻¹ K⁻¹ [32]

The Drude model used in reference [25] has been replaced by the model of Basu et al. [33] to better account for free carrier absorption in heavily doped regions.

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