Table 1
Input parameters and models for the simulated reference solar cell.
Cell design | |
---|---|
Silicon | Thickness 10 μm, p-type (2.1016 cm−3) |
n + emitter | Gaussian doping profile (2.1019 cm−3 peak doping, 100 nm decay length) |
p + BSF | Gaussian doping profile (2.1019 cm−3 peak doping, 100 nm decay length) |
Front coating | Silicon nitride, thickness 70 nm |
Rear contact | Full-area aluminium, thickness 300 nm |
Front contact shading | 4 % |
Silicon nitride | |
Refractive index | Vogt [21] up to 1.7 μm, Kischkat [22] beyond |
Thermal conductivity | 2.2 W.m−1.K−1 [23] |
Silicon | |
Complex refractive index | Green [24] for wavelengths below 1.2 μm, Fu [25] above |
Thermal conductivity | Glassbrenner [26] |
Peltier coefficients | π n = π p = 0.5 V [27] |
Carrier statistics | Fermi-Dirac |
Ionisation of dopants | complete |
Intrinsic carrier density | Couderc [28] |
Band gap energy | Pässler [29] |
Carrier mobility | Klaassen [17] |
Auger recombination | Niewelt [30] |
SRH lifetime | 30 μs |
Aluminium | |
Refractive index | Rakic [31] |
Thermal conductivity | 243.0 W m−1 K−1 [32] |
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