Table 1

Input parameters and models for the simulated reference solar cell.

Cell design
Silicon Thickness 10 μm, p-type (2.1016 cm−3)
n + emitter Gaussian doping profile (2.1019 cm−3 peak doping, 100 nm decay length)
p + BSF Gaussian doping profile (2.1019 cm−3 peak doping, 100 nm decay length)
Front coating Silicon nitride, thickness 70 nm
Rear contact Full-area aluminium, thickness 300 nm
Front contact shading 4 %
Silicon nitride
Refractive index Vogt [21] up to 1.7 μm, Kischkat [22] beyond
Thermal conductivity 2.2 W.m−1.K−1 [23]
Complex refractive index Green [24] for wavelengths below 1.2 μm, Fu [25] above
Thermal conductivity Glassbrenner [26]
Peltier coefficients π n  = π p = 0.5 V [27]
Carrier statistics Fermi-Dirac
Ionisation of dopants complete
Intrinsic carrier density Couderc [28]
Band gap energy Pässler [29]
Carrier mobility Klaassen [17]
Auger recombination Niewelt [30]
SRH lifetime 30 μs
Refractive index Rakic [31]
Thermal conductivity 243.0 W m−1 K−1 [32]

The Drude model used in reference [25] has been replaced by the model of Basu et al. [33] to better account for free carrier absorption in heavily doped regions.

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