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Fig. 5


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Raman measurements of Ar implanted poly-Si sacrificial layers at phase 3 (post-anneal) at different δimp. Samples are processed with dasi = 1.5 μm and Eimp = 250 keV. Raman measurements are normalized using the highest count and plotted on a semi-logarithmic scale. The inset show Dpore as a function of δimp for P implanted sacrificial layers, with Eimp = 5 keV and dasi = 1 μm.

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