SEM images and D_pore values of two argon implanted series of samples. Samples on the left are processed with increasing E_imp and d_asi = 1 μm. Samples on the right are processed with increasing d_asi and E_imp= 250 keV. All samples implanted with δ_imp = 1e16 cm⁻². No implantation occurred for the top-left sample, while the implantation was performed without amorphous silicon layer for the top-right sample.