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Fig. 4


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SEM images and Dpore values of two argon implanted series of samples. Samples on the left are processed with increasing Eimp and dasi = 1 μm. Samples on the right are processed with increasing dasi and Eimp = 250 keV. All samples implanted with δimp = 1e16 cm−2. No implantation occurred for the top-left sample, while the implantation was performed without amorphous silicon layer for the top-right sample.

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