Effective lifetime measured on as-sliced surface approaches the lifetime from surface passivated Cz-mono silicon slabs. The higher the lifetime, the longer the time needed to approach. At standard excess carrier density Δn = 10¹⁵ cm⁻³ (marked with yellow lines) and below the difference is under 20% in both low- (a), middle- (b) and high (c) lifetime cases. During the measurement the excess carrier density decreases, so the time passes from right to left on the x-axis.