Simulation of the e-PCD measurement of a gallium doped ingot with N_dop = 10¹⁶ cm⁻³ doping density and τ_defect = 300 μs lifetime. (a) Excess carrier depth profiles in steady-state conditions and Δt = 150 μs time after the illumination is terminated. The depth of the maximal injection level moves towards the bulk as the near-surface carriers recombine rapidly at the surface. (b) Decay of the detected signal. Note that the steady-state condition can be always achieved by varying the pulse length. The excess carrier density (c) and the calculated lifetime (d) in the function of time elapsed. (e) The measured lifetime is more accurate with the 1064 nm laser. (f) The accuracy of the simplified injection level calculation is satisfactory using the 1064 nm laser. S_front = 10⁶ cm/s, Φ = 2 × 10¹⁹ cm⁻² s⁻¹.