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Table 1

List of parameters used in the drift-diffusion simulation. Parameters marked with asterisks (*) are varied during the simulations. In case of multiple references, approximated values are chosen from the gives references.

Parameter Value Units References
Electron mobility in perovskite 5 cm2/(V s) [2,80,81]
Hole mobility in perovskite 5 cm2/(V s) [2,80,81]
Perovskite relative permitivity 20 [6870]
PCBM bandgap 1.8 eV [82]
PCBM LUMO –5.9 eV [83]
n doping in PCBM 1 × 1014 cm−3 fit.
PCBM relative permitivitty 3.9 [84]
Electron mobility in PCBM 1 cm2/(V s) fit.
NIO bandgap 2.8 eV [85]
NIO valence band –5.3 eV [85]
NIO relative permitivitty 8 [86]
p doping in NiO 1 × 1015 cm−3 *
Hole mobility in NIO 1 cm2/(V s) [87,88]
C60 bandgap 2 eV [89]
C60 HOMO –6.2 eV [90]
Electron mobility in C60 1 cm2/(V s) [91]
C60 relative permitivitty 3.03 [92]
n doping in C60 1 × 1015 cm−3 fit.
PEDOT:PSS bandgap 3 eV [93]
PEDOT:PSS HOMO –5 eV [93]
PEDOT:PSS relative permitivitty 3 [94]
p doping in PEDOT:PSS 1 × 1016 cm−3 *
Hole mobility in PEDOT:PSS 1 cm2/(V s) fit.
Cathodes Fermi level –4.9 eV [73,75,74]*
Anodes Fermi level –4.5 eV [78,79,71]*
Direct recombination constant 1 × 10−10 cm−3 s−1 [95]

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