Download original image
Evolution of the solar cell performances with the germanium composition x of the ZnGeO buffer layer for different absorber doping concentration NA using an absorber layer thickness of 2 μm and hole and electron mobilities of 25 cm2V−1s−1 and 50 cm2V−1s−1 respectively. Simulation are done using interface and defective layers at the heterojunction (dashed lines) as described in Section 1 and with an ideal heterojunction without such interface and defect layers (plain lines).
Current usage metrics show cumulative count of Article Views (full-text article views including HTML views, PDF and ePub downloads, according to the available data) and Abstracts Views on Vision4Press platform.
Data correspond to usage on the plateform after 2015. The current usage metrics is available 48-96 hours after online publication and is updated daily on week days.
Initial download of the metrics may take a while.