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Fig. 8


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Evolution of the solar cell performances with the germanium composition x of the ZnGeO buffer layer for different absorber doping concentration NA using an absorber layer thickness of 2 μm and hole and electron mobilities of 25 cm2V−1s−1 and 50 cm2V−1s−1 respectively. Simulation are done using interface and defective layers at the heterojunction (dashed lines) as described in Section 1 and with an ideal heterojunction without such interface and defect layers (plain lines).

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