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Surface photovoltage simulated (785 nm illumination 1000 W/m2) on bulk silicon doped n-type at ND = 1017 cm–3 (a) as a function of the thickness of the surface defect layer showing a reduction to a constant value for thick charge neutral layer and (b) as a function of acceptor defect density NDA (for defective layer thickness 0.1 μm) showing an initial reduction in SPV noted as a slight reduction in effective n-type doping, before NDA significantly larger than ND leads to the formation of an effective pn junction.
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