Sample process conditions for polished (P1 to P4) and textured (T1 to T4) wafers using two phosphorus implantation doses (D1 and D2 = 1.25D1) and two annealing durations at 850 °C (τ, 2τ).
|Annealing conditions||Implantation dose|
|D1||D2 = 1.25 × D1|
|None||P1 (Polished) T1 (Textured)||–|
|Standard time τ at 850 °C||P2 (Polished) T2 (Textured)||–|
|Double time 2τ at 850 °C||P3 (Polished) T3 (Textured)||P4 (Polished) T4 (Textured)|
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