| Issue |
EPJ Photovolt.
Volume 9, 2018
Special Issue: Advanced materials and processes to innovative applications - PhotoVoltaic Technical Conference 2017
|
|
|---|---|---|
| Article Number | 5 | |
| Number of page(s) | 8 | |
| Section | Bulk Silicon | |
| DOI | https://doi.org/10.1051/epjpv/2018001 | |
| Published online | 17 April 2018 | |
https://doi.org/10.1051/epjpv/2018001
Regular Article
Doping profile measurement on textured silicon surface
1
Probion Analysis,
37 rue de Fontenay,
92220
Bagneux, France
2
EDF ENR PWT,
33
Bd Saint Honoré,
38300
Bourgoin-Jallieu, France
* e-mail: bernard.sermage@probion.fr
Received:
28
July
2017
Received in final form:
15
December
2017
Accepted:
9
January
2018
Published online: 17 April 2018
In crystalline silicon solar cells, the front surface is textured in order to lower the reflection of the incident light and increase the efficiency of the cell. This texturing whose dimensions are a few micrometers wide and high, often makes it difficult to determine the doping profile measurement. We have measured by secondary ion mass spectrometry (SIMS) and electrochemical capacitance voltage profiling the doping profile of implanted phosphorus in alkaline textured and in polished monocrystalline silicon wafers. The paper shows that SIMS gives accurate results provided the primary ion impact angle is small enough. Moreover, the comparison between these two techniques gives an estimation of the concentration of electrically inactive phosphorus atoms.
Key words: textured surface silicon / ECV profiling / SIMS / PV emitter profiling
© Z. Essa et al., published by EDP Sciences, 2018
This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/4.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
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