Table 1

Parameters used in simulations.

Parameter [Unit] c-Si GaN InN Interpolation
(InGaN)

a [Å] 5.43 3.189 3.545 Linear
E g [eV] 1.08 3.42 0.76 Bowing = 1

Recombination

τn0 [s] 1, 3e-3 5e-9 5e-9
τp0 [s] 1, 3e-3 5e-9 5e-9
Crad [cm3/s] 1e-8 1e-8
Sn [cm/s] 100 1e4
Sp [cm/s] 100 1e4

Mobility

μ1n [cm2/(V s)] 55.24 55 30 Linear
μ2n [cm2/(V s)] 1429.23 1000 1100 Linear
N gn [cm-3] 1.07e17 2e17 8e18 Linear
μ1p [cm2/(V s)] 49.7 3 3
μ2p [cm2/(V s)] 479.37 170 340 Linear
Ngp [cm-3] 1.6e17 3e17 3e17

Polarization

P sp [C/m2] –0.034 –0.042 Bowing = –0.037
e33 [C/m2] 0.73 0.97 Linear
e31 [C/m2] –0.49 –0.57 Linear
C33 [GPa] 398 224 Linear
C31 [GPa] 106 92 Linear

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